Imec presents a framework to model GaN HEMT and InP HBT RF devices for 5G and 6G
News: Microelectronics December 6, 2022 At the 68th annual IEEE International Electron Devices Meeting (IEDM 2022) in San Francisco (3-7 December), the imec nanoelectronics research center in Leuven, Belgium, presented a Monte Carlo Boltzmann modeling framework which, for the first time uses microscopic heat-carrier distributions to predict 3D heat transport in advanced RF devices for …
Imec presents a framework to model GaN HEMT and InP HBT RF devices for 5G and 6G Read More »